Kuniyuki Kakushima
According to our database1,
Kuniyuki Kakushima
authored at least 37 papers
between 2005 and 2019.
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Bibliography
2019
Proceedings of the 13th IEEE International Conference on ASIC, 2019
2018
Effect of lanthanum silicate interface layer on the electrical characteristics of 4H-SiC metal-oxide-semiconductor capacitors.
Microelectron. Reliab., 2018
Improvement of SiO<sub>2</sub>/4H-SiC Interface properties by post-metallization annealing.
Microelectron. Reliab., 2018
Proceedings of the 2018 IEEE Symposium on VLSI Circuits, 2018
Verification of the Injection Enhancement Effect in IGBTs by Measuring the Electron and Hole Currents Separately.
Proceedings of the 48th European Solid-State Device Research Conference, 2018
2017
Durability evaluation of hexagonal WO<sub>3</sub> electrode for lithium ion secondary batteries.
Microelectron. Reliab., 2017
Proceedings of the 12th IEEE International Conference on ASIC, 2017
2016
Resistive switching properties of a thin SiO<sub>2</sub> layer with CeO<sub>x</sub> buffer layer on n<sup>+</sup> and p<sup>+</sup> Si bottom electrodes.
Microelectron. Reliab., 2016
Poly-Si gate electrodes for AlGaN/GaN HEMT with high reliability and low gate leakage current.
Microelectron. Reliab., 2016
Microelectron. Reliab., 2016
2015
Electron transport mechanism of tungsten trioxide powder thin film studied by investigating effect of annealing on resistivity.
Microelectron. Reliab., 2015
Improvement of charge/discharge performance for lithium ion batteries with tungsten trioxide electrodes.
Microelectron. Reliab., 2015
2014
A novel hetero-junction Tunnel-FET using Semiconducting silicide-Silicon contact and its scalability.
Microelectron. Reliab., 2014
On the current conduction mechanisms of CeO<sub>2</sub>/La<sub>2</sub>O<sub>3</sub> stacked gate dielectric.
Microelectron. Reliab., 2014
Characterization of interface state density of three-dimensional Si nanostructure by charge pumping measurement.
Microelectron. Reliab., 2014
Determination of energy and spatial distribution of oxide border traps in In<sub>0.53</sub>Ga<sub>0.47</sub>As MOS capacitors from capacitance-voltage characteristics measured at various temperatures.
Microelectron. Reliab., 2014
2013
Advantage of TiN Schottky gate over conventional Ni for improved electrical characteristics in AlGaN/GaN HEMT.
Proceedings of the European Solid-State Device Research Conference, 2013
2012
Improving the electrical characteristics of MOS transistors with CeO<sub>2</sub>/La<sub>2</sub>O<sub>3</sub> stacked gate dielectric.
Microelectron. Reliab., 2012
Analysis and modeling of the gate leakage current in advanced nMOSFET devices with severe gate-to-drain dielectric breakdown.
Microelectron. Reliab., 2012
Oxide and interface trap densities estimation in ultrathin W/La<sub>2</sub>O<sub>3</sub>/Si MOS capacitors.
Microelectron. Reliab., 2012
Resistive switching behavior of a CeO<sub>2</sub> based ReRAM cell incorporated with Si buffer layer.
Microelectron. Reliab., 2012
(100)- and (110)-oriented nMOSFETs with highly scaled EOT in La-silicate/Si interface for multi-gate architecture.
Proceedings of the 2012 European Solid-State Device Research Conference, 2012
2011
Effects of La<sub>2</sub>O<sub>3</sub> incorporation in HfO<sub>2</sub> gated nMOSFETs on low-frequency noise.
Microelectron. Reliab., 2011
Comparison of low-temperature electrical characteristics of gate-all-around nanowire FETs, Fin FETs and fully-depleted SOI FETs.
Microelectron. Reliab., 2011
Structural advantages of rectangular-like channel cross-section on electrical characteristics of silicon nanowire field-effect transistors.
Microelectron. Reliab., 2011
2010
Analysis of dependence of short-channel effects in double-gate MOSFETs on channel thickness.
Microelectron. Reliab., 2010
Advantage of further scaling in gate dielectrics below 0.5 nm of equivalent oxide thickness with La<sub>2</sub>O<sub>3</sub> gate dielectrics.
Microelectron. Reliab., 2010
Microelectron. Reliab., 2010
IEICE Trans. Electron., 2010
Effect of High Frequency Noise Current Sources on Noise Figure for Sub-50 nm Node MOSFETs.
IEICE Trans. Electron., 2010
2009
Microelectron. Reliab., 2009
2008
Electrical characteristics of MOSFETs with La<sub>2</sub>O<sub>3</sub>/Y<sub>2</sub>O<sub>3</sub> gate stack.
Microelectron. Reliab., 2008
2007
Carrier separation and Vth measurements of W-La<sub>2</sub>O<sub>3</sub> gated MOSFET structures after electrical stress.
IEICE Electron. Express, 2007
2006
Effective mobility and interface-state density of La<sub>2</sub>O<sub>3</sub> nMISFETs after post deposition annealing.
IEICE Electron. Express, 2006
2005
Microelectron. J., 2005