Pascal Chevalier
Orcid: 0000-0003-1848-9986Affiliations:
- STMicroelectronics, Crolles, France
- University of Lille, France (PhD 1988)
According to our database1,
Pascal Chevalier
authored at least 30 papers
between 2005 and 2023.
Collaborative distances:
Collaborative distances:
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Bibliography
2023
40-nm RFSOI technology exhibiting 90fs RON × COFF and fT/fMAX of 250 GHz/350 GHz targeting sub-6 GHz and mmW 5G applications.
Proceedings of the 53rd IEEE European Solid-State Device Research Conference, 2023
Proceedings of the IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, 2023
2022
Optical Phased Array for 905-nm LIDAR applications integrated on 300mm Si-Photonic Platform.
Proceedings of the Optical Fiber Communications Conference and Exhibition, 2022
Proceedings of the 2022 Joint European Conference on Networks and Communications & 6G Summit, 2022
2021
IEEE Trans. Circuits Syst. II Express Briefs, 2021
Proceedings of the 47th ESSCIRC 2021, 2021
Electro-Thermal Limitations and Device Degradation of SiGe HBTs with Emphasis on Circuit Performance.
Proceedings of the IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, 2021
2020
Smart Way to Adjust Schottky Barrier Height in 130 nm BiCMOS Process for sub-THz Applications.
Proceedings of the 2020 IEEE Radio and Wireless Symposium, 2020
2018
450 GHz f<sub>T</sub> SiGe: C HBT Featuring an Implanted Collector in a 55-nm CMOS Node.
Proceedings of the 2018 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS), 2018
Proceedings of the 2018 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS), 2018
2017
Proc. IEEE, 2017
Characterization, modeling and comparison of 1/f noise in Si/SiGe: C HBTs issued from three advanced BiCMOS technologies.
Proceedings of the 29th International Conference on Microelectronics, 2017
2016
A 234-261-GHz 55-nm SiGe BiCMOS Signal Source with 5.4-7.2 dBm Output Power, 1.3% DC-to-RF Efficiency, and 1-GHz Divided-Down Output.
IEEE J. Solid State Circuits, 2016
55-nm SiGe BiCMOS Distributed Amplifier Topologies for Time-Interleaved 120-Gb/s Fiber-Optic Receivers and Transmitters.
IEEE J. Solid State Circuits, 2016
2014
Dispersion study of DC and Low Frequency Noise in SiGe: C Heterojunction Bipolar Transistors used for mm-Wave to Terahertz applications.
Microelectron. Reliab., 2014
Proceedings of the 44th European Solid State Device Research Conference, 2014
2013
IEEE J. Solid State Circuits, 2013
Proceedings of the ESSCIRC 2013, 2013
2011
2010
An 18-Gb/s, Direct QPSK Modulation SiGe BiCMOS Transceiver for Last Mile Links in the 70-80 GHz Band.
IEEE J. Solid State Circuits, 2010
2009
IEEE J. Solid State Circuits, 2009
Proceedings of the IEEE Custom Integrated Circuits Conference, 2009
2008
Impact of inside spacer process on fully self-aligned 250 GHz SiGe: C HBTs reliability performances: a-Si vs. nitride.
Microelectron. Reliab., 2008
Single-Chip W-band SiGe HBT Transceivers and Receivers for Doppler Radar and Millimeter-Wave Imaging.
IEEE J. Solid State Circuits, 2008
Proceedings of the IEEE 2008 Custom Integrated Circuits Conference, 2008
2007
Proceedings of the IEEE 2007 Custom Integrated Circuits Conference, 2007
2005
IEEE J. Solid State Circuits, 2005