Wanki Kim

According to our database1, Wanki Kim authored at least 22 papers between 2012 and 2025.

Collaborative distances:
  • Dijkstra number2 of four.
  • Erdős number3 of four.

Timeline

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Bibliography

2025
An In-Situ Spatial-Temporal Sequence Detector for Neuromorphic Vision Sensor Empowered by High Density Vertical NAND Storage.
CoRR, March, 2025

Modeling Dynamic Interplay Between Charge Traps and Polarization for Memory Window Enhancement in Gate Injection Layers.
Proceedings of the IEEE International Reliability Physics Symposium, 2025

Enhanced Memory Performance in Ferroelectric NAND Applications: The Role of Tunnel Dielectric Position for Robust 10-Year Retention.
Proceedings of the IEEE International Reliability Physics Symposium, 2025

Retention Analysis of Ferroelectric FETs with Gate-Side Injection for Vertical NAND Storage.
Proceedings of the IEEE International Reliability Physics Symposium, 2025

Investigating Read-After-Write Delay in Ferroelectric FET with Gate-Side Injection.
Proceedings of the IEEE International Reliability Physics Symposium, 2025

The Opportunity of Anti-ferroelectrics in FeFET for Emerging Non-Volatile Memory Applications.
Proceedings of the IEEE International Reliability Physics Symposium, 2025

Comparative Study of Channel Materials for Ferroelectric NAND Applications.
Proceedings of the IEEE International Memory Workshop, 2025

Future Technology Outlook on DRAM/Flash Memories for More Moore and More Than Moore.
Proceedings of the IEEE International Memory Workshop, 2025

2024
Paving the Way for Pass Disturb Free Vertical NAND Storage via A Dedicated and String-Compatible Pass Gate.
CoRR, 2024

In-depth Analysis of the Hafnia Ferroelectrics as a Key Enabler for Low Voltage & QLC 3D VNAND Beyond 1K Layers: Experimental Demonstration and Modeling.
Proceedings of the IEEE Symposium on VLSI Technology and Circuits 2024, 2024



Design Framework for Ferroelectric Gate Stack Engineering of Vertical NAND Structures for Efficient TLC and QLC Operation.
Proceedings of the IEEE International Memory Workshop, 2024

2022
Pattern Training, Inference, and Regeneration Demonstration Using On-Chip Trainable Neuromorphic Chips for Spiking Restricted Boltzmann Machine.
Adv. Intell. Syst., 2022

Impact of Phase-Change Memory Flicker Noise and Weight Drift on Analog Hardware Inference for Large-Scale Deep Learning Networks.
Adv. Intell. Syst., 2022

2021

2019

Performance Analysis of Spiking RBM with Measurement-Based Phase Change Memory Model.
Proceedings of the Neural Information Processing - 26th International Conference, 2019

2018
The framework for factors affecting technology transfer for suppliers and buyers of technology in Korea.
Technol. Anal. Strateg. Manag., 2018

Reliability benefits of a metallic liner in confined PCM.
Proceedings of the IEEE International Reliability Physics Symposium, 2018

2012
Using AHP to determine intangible priority factors for technology transfer adoption.
Expert Syst. Appl., 2012

Nonvolatile 3D-FPGA with monolithically stacked RRAM-based configuration memory.
Proceedings of the 2012 IEEE International Solid-State Circuits Conference, 2012


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