Yue Hao

Orcid: 0000-0002-8081-2919

Affiliations:

Xidian University, State Key Discipline Laboratory of Wide Bandgap Semiconductor Technology, School of Microelectronics, Xi'an, China
Xi'an Jiao Tong University, China (PhD 1990)

According to our database¹, Yue Hao authored at least 79 papers between 2001 and 2025.

Collaborative distances:

Dijkstra number² of four.
Erdős number³ of three.

Timeline

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In proceedings

Article

PhD thesis

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Other

Bibliography

2025

Design of a Timer Queue Supporting Dynamic Update Operations.

[BibT_eX]

[DOI]

CoRR, August, 2025

A Novel Transform Accelerator With Fast Kernel Selection and Efficient Transform Circuit.

[BibT_eX]

[DOI]

IEEE Trans. Circuits Syst. I Regul. Pap., June, 2025

Hardware Trojan Detection Methods for Gate-Level Netlists Based on Graph Neural Networks.

[BibT_eX]

[DOI]

IEEE Trans. Computers, May, 2025

Corrections to "GNN-Based Hardware Trojan Detection at Register Transfer Level Leveraging Multiple-Category Features".

[BibT_eX]

[DOI]

IEEE Trans. Very Large Scale Integr. Syst., March, 2025

GNN-Based Hardware Trojan Detection at Register Transfer Level Leveraging Multiple-Category Features.

[BibT_eX]

[DOI]

IEEE Trans. Very Large Scale Integr. Syst., March, 2025

S4-KD: A single step spiking SiamFC+ + for object tracking with knowledge distillation.

[BibT_eX]

[DOI]

Neural Networks, 2025

Study of GaN Schottky barrier IMPATT diodes with a self-aligned field plate for terahertz applications.

[BibT_eX]

[DOI]

Microelectron. J., 2025

A comprehensive study on the electrical effects of avalanche region on GaN Schottky barrier IMPATT diodes through injection phases.

[BibT_eX]

[DOI]

Microelectron. J., 2025

Class-F-1 GaN Power Amplifier Integrated Active Antenna With Increased Efficiency for Wireless Power Transmission Applications.

[BibT_eX]

[DOI]

IEEE Internet Things J., 2025

24.4 THz·V fT×BV figure-of-merit AlN/GaN/AlN MISHEMTs with thin AlN buffer layer.

[BibT_eX]

[DOI]

Sci. China Inf. Sci., 2025

Physics based circuit compatible model for hybrid antiferroelectric random access memory.

[BibT_eX]

[DOI]

Sci. China Inf. Sci., 2025

Electro-optic tuning in ferroelectric capacitor with photonic crystal nanobeam cavity.

[BibT_eX]

[DOI]

Sci. China Inf. Sci., 2025

Al2O3/AlN/GaN MOS-HEMTs on 6-inch silicon substrate with high transconductance and state-of-the-art fmax × LG.

[BibT_eX]

[DOI]

Sci. China Inf. Sci., 2025

Gate conduction mechanisms and high Vth stability of Cu-gated p-GaN HEMT.

[BibT_eX]

[DOI]

Sci. China Inf. Sci., 2025

High linearity GaN HEMT by optimized three-dimensional-gated modulation via top-MIS-gate nanowire channel structure.

[BibT_eX]

[DOI]

Sci. China Inf. Sci., 2025

1.56 kV/30 A vertical β-Ga2O3 Schottky barrier diodes with composite edge terminations.

[BibT_eX]

[DOI]

Sci. China Inf. Sci., 2025

2024

Judgmentally adjusted Q-values based on Q-ensemble for offline reinforcement learning.

[BibT_eX]

[DOI]

Neural Comput. Appl., September, 2024

Effect of 60Coγ ray radiation on electrical properties of SiGe HBTs at low temperatures.

[BibT_eX]

[DOI]

Microelectron. J., February, 2024

Low-high-low doped Ga2O3 Schottky barrier IMPATT diodes on various crystal orientations for terahertz applications.

[BibT_eX]

[DOI]

Microelectron. J., 2024

Broadband light-active optoelectronic FeFET memory for in-sensor non-volatile logic.

[BibT_eX]

[DOI]

Sci. China Inf. Sci., 2024

Improved RF power performance via electrostatic shielding effect using AlGaN/GaN/graded-AlGaN/GaN double-channel structure.

[BibT_eX]

[DOI]

Sci. China Inf. Sci., 2024

Two-dimensional materials for future information technology: status and prospects.

[BibT_eX]

[DOI]

Sci. China Inf. Sci., 2024

Tunable lithium niobate metasurfaces for phase-only modulation based on quasi-bound states in the continuum.

[BibT_eX]

[DOI]

Sci. China Inf. Sci., 2024

Performance improvement of β-Ga2O3 SBD-based rectifier with embedded microchannels in ceramic substrate.

[BibT_eX]

[DOI]

Sci. China Inf. Sci., 2024

High-Al-composition AlGaN/GaN MISHEMT on Si with fT of 320 GHz.

[BibT_eX]

[DOI]

Sci. China Inf. Sci., 2024

High-voltage quasi-vertical GaN-on-Si Schottky barrier diode with edge termination structure of optimized multi-level N ion implantation.

[BibT_eX]

[DOI]

Sci. China Inf. Sci., 2024

A novel multi-threshold coupling InAlN/GaN double-channel HEMT for improving transconductance flatness.

[BibT_eX]

[DOI]

Sci. China Inf. Sci., 2024

Cascade and Extensible In-Memory Arithmetic Computing in 2T1R ReRAM Arrays Using Time-Sum-Logic Design.

[BibT_eX]

[DOI]

IEEE Access, 2024

71 GHz-fmax β-Ga2O3-on-SiC RF Power MOSFETs with Record Pout=3.1 W/mm and PAE=50.8% at 2 GHz, Pout= 2.3 W/mm at 4 GHz, and Low Microwave Noise Figure.

[BibT_eX]

[DOI]

Proceedings of the IEEE Symposium on VLSI Technology and Circuits 2024, 2024

$\beta$-Ga2O3-on-SiC RF MOSFETs $\beta$.

[BibT_eX]

[DOI]

Proceedings of the IEEE Region 10 Conference, 2024

2023

A compact model of DC I-V characteristics for depleted Ga2O3 MOSFETs.

[BibT_eX]

[DOI]

Microelectron. J., October, 2023

2.29-kV GaN-based double-channel Schottky barrier diodes on Si substrates with high VON uniformity.

[BibT_eX]

[DOI]

Sci. China Inf. Sci., June, 2023

1.7 kV normally-off p-GaN gate high-electron-mobility transistors on a semi-insulating SiC substrate.

[BibT_eX]

[DOI]

Sci. China Inf. Sci., February, 2023

Degradation induced by holes in Si3N4/AlGaN/GaN MIS HEMTs under off-state stress with UV light.

[BibT_eX]

[DOI]

Sci. China Inf. Sci., February, 2023

Ga2O3 Heterojunction PN Diodes with Suppressed Background Carrier Concentration for Improved Breakdown Voltage.

[BibT_eX]

[DOI]

Proceedings of the Device Research Conference, 2023

2022

2022 roadmap on neuromorphic devices and applications research in China.

[BibT_eX]

[DOI]

Neuromorph. Comput. Eng., December, 2022

A Broadband Amplifier With Flat Bandwidth for Modulator and Measurement Driver Circuits.

[BibT_eX]

[DOI]

IEEE Trans. Instrum. Meas., 2022

Spiking SiamFC++: Deep Spiking Neural Network for Object Tracking.

[BibT_eX]

[DOI]

CoRR, 2022

Hardware-algorithm collaborative computing with photonic spiking neuron chip based on integrated Fabry-Pérot laser with saturable absorber.

[BibT_eX]

[DOI]

CoRR, 2022

Design and simulation of reverse-blocking Schottky-drain AlN/AlGaN HEMTs with drain field plate.

[BibT_eX]

[DOI]

Sci. China Inf. Sci., 2022

Investigation of heavy ion irradiation effects on 650-V p-GaN normally-off HEMTs.

[BibT_eX]

[DOI]

Sci. China Inf. Sci., 2022

Unidirectional p-GaN gate HEMT with composite source-drain field plates.

[BibT_eX]

[DOI]

Sci. China Inf. Sci., 2022

Experimental demonstration of photonic spike-timing-dependent plasticity based on a VCSOA.

[BibT_eX]

[DOI]

Sci. China Inf. Sci., 2022

Improved transport properties and mechanism in recessed-gate InAlN/GaN HEMTs using a self-limited surface restoration method.

[BibT_eX]

[DOI]

Sci. China Inf. Sci., 2022

Controlling Memristance and Negative Differential Resistance in Point-Contacted Metal-Oxides-Metal Heterojunctions: Role of Oxygen Vacancy Electromigration and Electron Hopping.

[BibT_eX]

[DOI]

Adv. Intell. Syst., 2022

A Novel Concept of using Double Threshold Voltage Coupling to Improve the linearity of AlGaN/GaN HEMTs for millimeter-wave applications.

[BibT_eX]

[DOI]

Proceedings of the 2022 IEEE International Conference on Integrated Circuits, 2022

First Demonstration of High PAE Performance Using InGaN Channel HEMT for 5G RF Applications.

[BibT_eX]

[DOI]

Proceedings of the 2022 IEEE International Conference on Integrated Circuits, 2022

Systematic Study on Positive Bias Temperature Instability(PBTI) of ZrO2-based Ge nMOSFETs with Interlayer Passivations.

[BibT_eX]

[DOI]

Proceedings of the International Conference on IC Design and Technology, 2022

2021

Computing Primitive of Fully VCSEL-Based All-Optical Spiking Neural Network for Supervised Learning and Pattern Classification.

[BibT_eX]

[DOI]

IEEE Trans. Neural Networks Learn. Syst., 2021

A modified supervised learning rule for training a photonic spiking neural network to recognize digital patterns.

[BibT_eX]

[DOI]

Sci. China Inf. Sci., 2021

High mobility germanium-on-insulator p-channel FinFETs.

[BibT_eX]

[DOI]

Sci. China Inf. Sci., 2021

Recent progress of integrated circuits and optoelectronic chips.

[BibT_eX]

[DOI]

Sci. China Inf. Sci., 2021

Novel Selective Area Recessed Regrowth-free Ohmic Contacts to High Al-content Barrier.

[BibT_eX]

[DOI]

Proceedings of the 2021 IEEE International Conference on Integrated Circuits, 2021

All-Inorganic Two-Dimensional Ruddlesden-Popper Perovskite Cs2PbI2Cl2 Nanosheet Films for Self-Powered, Visible-Blind UV Photodetectors.

[BibT_eX]

[DOI]

Proceedings of the 14th IEEE International Conference on ASIC, 2021

2020

Lateral GaN Schottky Barrier Diode for Wireless High-Power Transfer Application With High RF/DC Conversion Efficiency: From Circuit Construction and Device Technologies to System Demonstration.

[BibT_eX]

[DOI]

IEEE Trans. Ind. Electron., 2020

Real-time optical spike-timing dependent plasticity in a single VCSEL with dual-polarized pulsed optical injection.

[BibT_eX]

[DOI]

Sci. China Inf. Sci., 2020

Enhanced memory capacity of a neuromorphic reservoir computing system based on a VCSEL with double optical feedbacks.

[BibT_eX]

[DOI]

Sci. China Inf. Sci., 2020

Investigation of Inverse Piezoelectric Effect and Trap Effect in AlGaN/GaN HEMTs Under Reverse-Bias Step Stress at Cryogenic Temperature.

[BibT_eX]

[DOI]

IEEE Access, 2020

Normally-Off Hydrogen-Terminated Diamond Field Effect Transistor With Ferroelectric HfZrOx/Al2O3 Gate Dielectrics.

[BibT_eX]

[DOI]

IEEE Access, 2020

Low On-Resistance H-Diamond MOSFETs With 300 °C ALD-Al2O3 Gate Dielectric.

[BibT_eX]

[DOI]

IEEE Access, 2020

Comprehensive Design of Device Parameters for GaN Vertical Trench MOSFETs.

[BibT_eX]

[DOI]

IEEE Access, 2020

Hardware Architecture and Algorithm Co-Design for Multi-Layer Photonic Neuromorphic Network with Excitable VCSELs-SA.

[BibT_eX]

[DOI]

Proceedings of the Optical Fiber Communications Conference and Exhibition, 2020

Evolution of Defect in AlGaN-based Deep Ultraviolet Light Emitting Diodes During Electrical Stress.

[BibT_eX]

[DOI]

Proceedings of the 2020 IEEE International Reliability Physics Symposium, 2020

2018

Threshold voltage shift and interface/border trapping mechanism in Al2O3/AlGaN/GaN MOS-HEMTs.

[BibT_eX]

[DOI]

Proceedings of the IEEE International Reliability Physics Symposium, 2018

2016

A novel graphical method for dual-frequency two sections transformer.

[BibT_eX]

[DOI]

IEICE Electron. Express, 2016

2015

A High-Throughput VLSI Architecture Design of Arithmetic Encoder in JPEG2000.

[BibT_eX]

[DOI]

J. Signal Process. Syst., 2015

A 5-8 GHz wideband 100 W internally matched GaN power amplifier.

[BibT_eX]

[DOI]

IEICE Electron. Express, 2015

The characteristics of fluorinated gate dielectric AlGaN/GaN MIS-HEMT.

[BibT_eX]

[DOI]

IEICE Electron. Express, 2015

AlGaN channel MIS-HEMTs with a very high breakdown electric field and excellent high-temperature performance.

[BibT_eX]

[DOI]

IEICE Electron. Express, 2015

2014

Reliability investigation of AlGaN/GaN high electron mobility transistors under reverse-bias stress.

[BibT_eX]

[DOI]

Microelectron. Reliab., 2014

Novel silicon-controlled rectifier (SCR) for digital and high-voltage ESD power supply clamp.

[BibT_eX]

[DOI]

Sci. China Inf. Sci., 2014

2013

Erratum: The impact of trapping centers on AlGaN/GaN resonant tunneling diode [IEICE Electronics Express Vol 10 (2013) No 19 pp 20130588].

[BibT_eX]

[DOI]

IEICE Electron. Express, 2013

The impact of trapping centers on AlGaN/GaN resonant tunneling diode.

[BibT_eX]

[DOI]

IEICE Electron. Express, 2013

2010

Finite element analysis and optimization of temperature field in GaN-MOCVD reactor.

[BibT_eX]

[DOI]

Sci. China Inf. Sci., 2010

2008

The mobility of two-dimensional electron gas in AlGaN/GaN heterostructures with varied Al content.

[BibT_eX]

[DOI]

Sci. China Ser. F Inf. Sci., 2008

2005

Efficient parametric yield optimization of VLSI circuit by uniform design sampling method.

[BibT_eX]

[DOI]

Microelectron. Reliab., 2005

Short Critical Area Computational Method Using Mathematical Morphology.

[BibT_eX]

[DOI]

Junping Wang

Yue Hao

Proceedings of the Computational Intelligence and Security, International Conference, 2005

2003

Reliability Estimation Model of ICs Interconnect Based on Uniform Distribution of Defects on a Chip.

[BibT_eX]

[DOI]

Proceedings of the 18th IEEE International Symposium on Defect and Fault-Tolerance in VLSI Systems (DFT 2003), 2003

2001

Relation between Reliability and Yield of IC's Based on Discrete Defect Distribution Model.

[BibT_eX]

[DOI]

Proceedings of the 16th IEEE International Symposium on Defect and Fault-Tolerance in VLSI Systems (DFT 2001), 2001

Yue Hao

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