Alexander Grill

According to our database1, Alexander Grill authored at least 19 papers between 2019 and 2025.

Collaborative distances:
  • Dijkstra number2 of four.
  • Erdős number3 of four.

Timeline

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Bibliography

2025
CV Characterization of Si/SiGe Heterostructures at Cryo Temperatures.
Proceedings of the IEEE International Reliability Physics Symposium, 2025

Advanced RTN Analysis on 3D NAND Trench Devices Using Physics-Informed Machine Learning Framework.
Proceedings of the IEEE International Reliability Physics Symposium, 2025

Investigation of Cryogenic Aging in 28 nm CMOS: Suppression of BTI and HCD in Circuits and SRAM.
Proceedings of the IEEE International Reliability Physics Symposium, 2025

Impact of Gate Metal Work Function on 1/f Noise in RMG MOSFETs.
Proceedings of the IEEE International Reliability Physics Symposium, 2025

2024
Insight into Latchup Risk in 28nm Planar Bulk Technology for Quantum Computing Applications.
Proceedings of the IEEE International Reliability Physics Symposium, 2024

2023
Wafer-Scale Electrical Characterization of Silicon Quantum Dots from Room to Low Temperatures.
Proceedings of the IEEE International Test Conference, 2023

Study of Transistor Metrics for Room-Temperature Screening of Single Electron Transistors for Silicon Spin Qubit Applications.
Proceedings of the IEEE European Test Symposium, 2023

2022
Scalable 1.4 μW cryo-CMOS SP4T multiplexer operating at 10 mK for high-fidelity superconducting qubit measurements.
Proceedings of the IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits 2022), 2022

Understanding and Modeling Opposite Impacts of Self-Heating on Hot-Carrier Degradation in n- and p-Channel Transistors.
Proceedings of the IEEE International Reliability Physics Symposium, 2022

On Superior Hot Carrier Robustness of Dynamically-Doped Field-Effect-Transistors.
Proceedings of the IEEE International Reliability Physics Symposium, 2022

Modelling ultra-fast threshold voltage instabilities in Hf-based ferroelectrics.
Proceedings of the IEEE International Reliability Physics Symposium, 2022

Significant Enhancement of HCD and TDDB in CMOS FETs by Mechanical Stress.
Proceedings of the IEEE International Reliability Physics Symposium, 2022

Temperature Dependent Mismatch and Variability in a Cryo-CMOS Array with 30k Transistors.
Proceedings of the IEEE International Reliability Physics Symposium, 2022

2021

2020
A Compact Physics Analytical Model for Hot-Carrier Degradation.
Proceedings of the 2020 IEEE International Reliability Physics Symposium, 2020

Quantum Mechanical Charge Trap Modeling to Explain BTI at Cryogenic Temperatures.
Proceedings of the 2020 IEEE International Reliability Physics Symposium, 2020

On the impact of mechanical stress on gate oxide trapping.
Proceedings of the 2020 IEEE International Reliability Physics Symposium, 2020

Reliability and Variability of Advanced CMOS Devices at Cryogenic Temperatures.
Proceedings of the 2020 IEEE International Reliability Physics Symposium, 2020

2019
Modeling the Effect of Random Dopants on Hot-Carrier Degradation in FinFETs.
Proceedings of the IEEE International Reliability Physics Symposium, 2019


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